Abstract: This letter describes a miniature, ultra low power, all-dynamic temperature sensor based on a duty-cycled resistive transducer bridge and a 9-bit asynchronous SAR ADC in 65-nm CMOS. It ...
Abstract: This paper evaluates the capability of SiC power semiconductor devices, in particular JFET and Schottky barrier diodes (SBD) for application in high-temperature power electronics. SiC JFETs ...
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